PART |
Description |
Maker |
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz 4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
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HYNIX[Hynix Semiconductor]
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K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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AT90SC4816RS |
AT90SC4816RS Summary [Updated 06/03. 2 Pages] Summary of the AT90SC4816RS giving the key features. a brief description and a block diagram. Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann
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Atmel
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K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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MT48LC16M16LF |
(MT48xx16M16LF) 4M x 16 x 4 Banks
|
Micron Technology
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M12L64164A-6BG2M M12L64164A-6TG2M M12L64164A-5TG2M |
1M x 16 Bit x 4 Banks
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Elite Semiconductor Memory Technology Inc. Elite Semiconductor Mem...
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W9812G6JH-6 W9812G6JH13 W9812G6JH-5 W9812G6JH-6I W |
2M x 4 BANKS x 16 BITS SDRAM
|
Winbond
|
W981216 W981216AH |
2M x 16 bit x 4 Banks SDRAM
|
Winbond Electronics
|
W9825G6DH W9825G6DH-6 W9825G6DH-6C W9825G6DH-6I W9 |
4M 】 4 BANKS 】 16 BITS SDRAM
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Winbond
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W9812G6GH W9812G6GH-6 W9812G6GH-6C W9812G6GH-6I W9 |
2M X 4 BANKS X 16 BITS SDRAM
|
Winbond
|
W9825G2JB |
2M ?4 BANKS ?32BITS SDRAM
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Winbond
|